GaAs-Al_xGa_(1-x)As双势垒结构中电子共振隧穿寿命  

Electron Tunneling Lifetime Through a GaAs-Al_xGa_(1-x)As Double Barriers Heterostructure

作　　者：宫箭[1] 梁希侠[1] 班士良[1] 

机构地区：[1]内蒙古大学理工学院物理系,呼和浩特010021

出　　处：《Journal of Semiconductors》2005年第10期1929-1933,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:10164003);内蒙古大学青年科技基金(批准号:ND0206)资助项目~~

摘　　要：采用转移矩阵和数值计算相结合的方法求解含时Schrdinger方程,计算了电子在双势垒结构中的构建时间和隧穿寿命.结果表明:构建时间和隧穿寿命对于描述电子隧穿时间特性同等重要.通过研究隧穿时间对结构参数的依赖情况发现,隧穿寿命随阱宽和垒厚的增加而迅速增大.The time-dependent SchrOdinger equation is numerically solved by the combing transfer matrix and the Runge-Kutta method. The temporal evolution of the wave functions and tunneling time are discussed within a GaAs-AlxGa1-xAs double barriers structure. It indicates that the build-up time cannot be ignored in comparison with the tunneling lifetime for the small system case. Furthermore, the tunneling lifetimes are studied as the functions of the structure parameters. It is also found that the tunneling lifetime increases monotonously with the well width and the barriers thickness.

关 键 词：双势垒 共振隧穿 寿命 

分 类 号：TN301[电子电信—物理电子学]