超高速半导体光电探测器的研制  

Development of Ultra High Speed Semiconductor Photo-detectors

作　　者：王益成[1] 

机构地区：[1]北京交通大学昌平职业技术学院,北京102200

出　　处：《计算机测量与控制》2005年第9期990-991,994,共3页Computer Measurement &Control

摘　　要：介绍了一种微微秒Si—PIN光电探测器;虽然Si—PIN光电探测器结构与工艺简单,易于批量生产,但用硅材料很难使其响应时间小于100ps。为改善响应及防止高频反射影响,试制中加入了适量的铁磁物质。实验结果表明,研制的这种元件响应速度快,上升时间小于100ps,值得推广。The pico-second Si-PIN Photo-detectors are reported . Although the pico-second Si PIN Photo-detectors structure and technology is simple, it can be easily produced with large quantities and is difficult to make the rise time less than lOOps using si. To improve the response and prevent the effect of the high frequency reflects, certain proper quantity of ferro-magnetic materials is added in this experiment. The experimental results show that response is high speed and rise time is less then 100ps, therefore this technology is worth popularizing.

关 键 词：光电探测器 响应时间 响应角 离子注入技术 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]