实现受激光发射探索S i基激光器  

To Achieve Stimulated Light-emission Approach to Si-based Laser

作　　者：彭英才[1] X.W.Zhao 傅广生[3] 王英龙[3] 

机构地区：[1]河北大学电子信息工程学院 [2]Department of Physics,Tokyo University of Science,Tokyo,Japan [3]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2005年第5期948-953,共6页Journal of Synthetic Crystals

基　　金：河北省自然科学基金(No.503125);中国科学院半导体研究所半导体材料科学重点实验室开放基金资助

摘　　要：本文首先评论了近5年来各类Si基纳米材料在光增益和受激光发射特性研究方面所取得的最新进展.进而指出,晶粒有序的小尺寸和高密度纳米晶Si(nc-Si),具有载流子三维量子受限的局域化纳米结构和具有高激活浓度Er掺杂的nc-Si:Er/SiO2纳米薄膜,将是实现Si基激光器的主要有源区材料.最后,对这一领域的今后发展趋势进行了初步展望.预计在今后的3～5年内,实现Si基激光器的探索性研究高潮即将到来,并极有可能获得重大突破性进展,即在进一步提高发光效率的基础上,实现稳定可靠的光增益和受激光发射特性.而后再用3～5年的时间,通过优化结构形式与工艺技术,研制出具有器件实用化水平的Si基激光器.The design and fabrication of Si-based laser is one of the most charming and challenging subjects in the Si-based optoelectronics field from both the theoretical and application points of view. This is due to being the key device of all-Si optoelectronic integrated circuit. The achievement of optical gain and stimulated light-emission of active region materials is required for fabricating the Si-based laser. A new progress in studying optical gain and stimulated light-emission properties of various Si-based nanomaterials is reviewed in the paper. The results indicate that the ordered nanocrystalline Si with small size and high density, the localized nanostructures with three dimensional quantum confinement and the nc-Si：Er/SiO2 films with high concentration Er doping are active region materials to achieve Si-based laser. Finally,we predicate the tendency to develop Si-based laser in the near future： the study of Si-based laser will obtain an important break through, i. e. , the stimulated light-emission can be realized in the 2006-2010 year. Furthermore, the device qualitative Si-based laser can be achieved in the 2011-2015 year.

关 键 词：NC-SI 局域化Si基纳米结构 光增益 受激光发射 Si基激光器 全Si光电子集成 

分 类 号：TN248[电子电信—物理电子学]