双面抛光加工运动过程分析与数学模型的建立  

Motion Analysis for Double-Sided Polishing Process and Mathematical Model Establishing

作　　者：金杨福[1] 李伟[1] 胡刚翔[1] 胡晓珍[2] 

机构地区：[1]浙江工业大学化工与材料学院,杭州310014 [2]浙江海洋学院工程学院,舟山316000

出　　处：《南京航空航天大学学报》2005年第B11期86-89,共4页Journal of Nanjing University of Aeronautics & Astronautics

基　　金：浙江省自然科学基金(M503049)资助项目;浙江省科技厅重点基金(2004C21007)资助项目;浙江省教育厅重点基金(20030157)资助项目;浙江省教育厅科研计划基金(20030149)资助项目;宁波市科技基金(2003A41031)资助项目

摘　　要：晶片在双面抛光加工过程中具有多向运动、受力复杂、表面材料微细去除的特征,晶片的运动和受力是影响双面抛光加工质量的主要因素。本文通过分析双面抛光加工时晶片的运动规律和受力状态,建立了双面抛光加工时晶片运动的数学模型。研究结果表明,晶片的运动是行星运动和自转运动的合成,当晶片质量和惯性矩较小并可以忽略时,晶片的自转速度与抛光压力、抛光垫和晶片表面间的摩擦状态无关,而与行星轮和晶片端面间的摩擦状态、行星轮系统运动参数和抛光盘转速有关。Double-sided polishing process is a precise machining method for silicon wafers. It has the characteristics of the multi-directional motion, the complicated load and the tiny material removal. The wafer motion and the load in double-sided polishing process are main factors which affect the wafer surface quality. This paper discusses the wafer motion and the load in the double-sided polishing process, and estabishes a mathematical model based on the analysis of the motion and the load in wafers. Result shows that the motion of wafers is composed of the planet motion and the axial rotation motion. And the axial rotation speed of wafers is independent of the polishing pressure and the friction state between polishing pad and wafer surfaces, but it is related to the friction state between the planet wheel and the wafer edge, motion parameters of the planet wheel system, and the rotation speed of the polishing plate, when the mass and the moment of the wafer inertia are small to be ignored.

关 键 词：双面抛光 晶片 加工过程 数学模型 

分 类 号：TH161[机械工程—机械制造及自动化]