Photoluminescence characteristics of GaN：Si  

作　　者：冯倩 龚欣 张晓菊 郝跃 

机构地区：[1]Research Institute of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China [2]School of Telecommunications Engineering, Xidian University, Xi'an 710071, China

出　　处：《Chinese Physics B》2005年第10期2133-2136,共4页中国物理B（英文版）

摘　　要：Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.

关 键 词：GaN：Si HETEROEPITAXY HALL PHOTOLUMINESCENCE 

分 类 号：O43[机械工程—光学工程]