多孔SiC陶瓷烧结体的导电特性  

Sintered Porous SiC Body and its Conductivity

作　　者：徐彦忠 丘睦钦 曹广军[1] 丘思畴[1] 李乃平[1] 何华辉[1] 王敬义[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《功能材料》1996年第2期123-125,共3页Journal of Functional Materials

摘　　要：利用聚碳硅烷（Ｐｏｌｙ－ｃａｒｂｏｓｉｌａｎｅ）热分解形成的碳化硅，将工业碳化硅颗粒粘结在一起，形成多孔的碳化硅烧结体。文中给出了烧结体的微观分析，热分析和结构分析的结果。同时还给出了烧结时不同气体流量与常温电阻关系，对实验结果从掺杂，减少富碳和钝化表界面悬挂键几个角度进行了讨论。The porous silicon carbide produced by sintering the poly carbosilane with industrial use silicon carbide granules is presented in the report. The test results on its morphology, structure and conductivity are also discussed. Resistivity against temperature relation of the sintered silicon carbide shows two obvious linear segments in the curve, which correlates two conduction mechanisms of the activation energy about 0.2 eV and 0.55eV. Flux of sintering nitrogen gas has an influencce on its conductivity. The measurement result is examined in three different aspects, which are doping reduction of excess carbon atoms and passivation of surface and interface of porous sintering bodies, and shows a similar influence on the conductivity.

关 键 词：碳化硅 聚碳硅烷 陶瓷 烧结体 导电性 

分 类 号：TQ174.758[化学工程—陶瓷工业] TM283[化学工程—硅酸盐工业]