纳米硅薄膜的生长动力学与计算机模拟  

GROWTH DYNAMICS OF NANO-CRYSTALLINE SILICON (nc-Si:H)FILMS AND ITS COMPUTER SIMULATION

作　　者：林鸿溢[1] 武旭辉[1] 何宇亮[2] 褚一鸣 

机构地区：[1]北京理工大学电子工程系,北京100081 [2]北京航空航天大学物理系,北京100083 [3]中国科学院电子显微镜实验室,北京100080

出　　处：《物理学报》1996年第4期655-660,共6页Acta Physica Sinica

基　　金：国家自然科学基金资助的课题.

摘　　要：氢化纳米硅(nc-Si:H)薄膜由于其具有奇异的结构和独特的性质,而引起广泛的关注.本文在等离子体增强化学气相淀积(PECVD)系统中,以高纯H_2高度稀释SiH_4为反应气体源,在射频和直流双重功率源的激励下制备成功具有纳米结构的nc-Si:H薄膜.利用高分辨率电子显微镜(HREM)、Raman散射谱(RSS)、扫描隧道电子显微镜(STM)等实验技术对nc-Si:H薄膜样品作了研究.基于对薄膜制备过程的动力学分析,提出nc-Si:H薄膜的分形生长模型:扩散与反应限制凝聚模型,其结果与实验符合得很好.The hydrogenated nano-crystalline silicon (nc-Si:H) films have attracted more attention for peoples, because of their novel structure and peculiar properties. The nc-Si: H films are prepared by the high purity hydrogen diluted methane as the reactive gases and actived at r. f. and d. c. double power sources, in a conventional plasma enhanced chemical vapor deposition (PECVD) system. The film samples have been studied by means of high-resolution electron microscopy, Raman scattering spectroscopy, scanning tunneling microscopy and other means. Based on the analysis of fabricated processes of the nc-Si: H films, a fractal growth model which called diffusion and reaction limited aggregation (DRLA) model was proposed. It is shown that results of computer simulation agree with the experimental results.

关 键 词：纳米 硅 薄膜 生长动力学 

分 类 号：TN304.12[电子电信—物理电子学] TN304.055