电极处势垒对新结构器件电子输运的影响  

THE INFLENCE OF ELECTRON BARRIER HEIGHT AT ELECTRODE ON ELECTRON TRANSPORT IN NEW DEVICE

作　　者：陈立春[1,2] 王向军[3] 徐叙瑢[3] 姚健铨 

机构地区：[1]天津大学激光与光电子学研究所 [2]天津理工学院材料物理研究所,天津300191 [3]天津理工学院材料物理研究所

出　　处：《物理学报》1996年第4期709-714,共6页Acta Physica Sinica

基　　金：天津市二十一世纪青年科学基金;天津市高等教育局重点学科基金;国家自然科学基金资助的课题.

摘　　要：在新结构薄膜电致发光器件中,电极处的势垒的高度决定电子的注入数量.在电极界面处插入不同的薄膜材料,可以改变势垒的高度,并对电子注入数量和器件的发光亮度产生影响.通过拟合计算得到ZnO/SiO,ITO/SiO的界面势垒高度分别为0.51和1.87eV.The influence of electronic barrier heights on the quantity of injection charge and electroluminescence (EL) in newly designed devices have been studied. By sandwithing Y2O3, ZnO thin films in between ITO and SiO or Al and ITO, we could change the electron barrier height and the quantities of the injection charges. It is found that Y2O3 film is a good electron barrier film, we sandwithed it in between Al and SiO layers and between ITO and SiO, respectively, and measured the injection charges data with different applied volotage. Using the Fowler-Nordeim tunneling current equation, the electron barrier height at SiO/Al 3.0 eV and at SiO/ITO 1.85 eV were obtained. The ZnO is a conducting film, the electron barrier height were reduced if sandwith it between Al and SiO layers or between ITO and SiO layers, by using the same method, we obtained the electron barrier height at ZnO/SiO, which is 0. 5 eV. The EL intensities of above devices have been measured and found that increasing the quantities of injection charges may increase the EL intensities in these new devices.

关 键 词：电致发光器件 电极 势垒 电子输运 

分 类 号：TN383.1[电子电信—物理电子学]