掩埋隧道结的研制及其在1.3μm VCSEL结构中的应用  

Fabrication of Buried Tunnel Junction and its Application in 1.3 μm VCSEL Structure

作　　者：吴惠桢[1] 刘成[1] 劳燕锋[1] 黄占超[1] 曹萌[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《江西科学》2005年第5期557-561,共5页Jiangxi Science

基　　金：973项目(2003CB314903)

摘　　要：采用气态源分子束外延(GSMBE)技术在(100)InP衬底上分别了生长了δ掺杂的p+-A lInAs-n+-InP和p+-InP-n+-InP两种隧道结结构,用电化学C-V和I-V特性曲线表征了载流子浓度和电学特性,发现p+-A lInAs-n+-InP隧道结性能好于p+-InP-n+-InP隧道结。接着在(100)InP衬底上生长了包含p+-A lInAs-n+-InP掩埋隧道结和多量子阱有源层的1.3μm垂直腔面发射激光器(VCSEL)结构,测试得出其开启电压比普通的PIN结VCSEL小,室温下其电致荧光谱波长在1.29μm。δ - doped P^＋ -AllnAs-n^＋ -InP and p^＋ - InP - n^＋ - InP tunnel junction structures have been grown by gas - source molecular - beam epitaxy （GSMBE） on InP（100） substrates. Distribution of carriers and electrical properties have been characterized by electrochemical C - V method and current - voltage characteristics. It has been found that p^＋ - AiInAs - n^＋ - InP tunnel junction is superior to p^＋ - InP - n^＋ - InP tunnel junction. Then 1.3μm vertical - cavity surface - emitting laser （VCSEL）s：ucture which employs p^＋ -AlInAs = n^＋ -InP buried tunnel junction and multiple quantum wells has been grown on InP（100） substrates. The VCSEL structure demonstrates low threshold voltage. The gain peak position measured from electro - luminescence is at 1.29 μm at room temperature.

关 键 词：隧道结 垂直腔面发射激光器 光电特性 

分 类 号：TN248[电子电信—物理电子学]