脉冲激光沉积GaN薄膜  

Structural Properties of GaN Films Grown on Al_2O_3 Substrate by Pulsed Laser Deposition

作　　者：吕珂[1] 叶志清[1] 薛琴[1] 柯强[1] 闵秋应[1] 

机构地区：[1]江西师范大学物理与通信电子学院,江西南昌330027

出　　处：《江西师范大学学报（自然科学版）》2005年第5期453-456,共4页Journal of Jiangxi Normal University(Natural Science Edition)

基　　金：江西省自然科学基金资助项目(0512016)

摘　　要：采用脉冲激光沉积技术,在Al2O3(0001)衬底上生长GaN薄膜,利用X射线衍射(XRD)、原子力显微镜(AFM)研究了不同沉积温度,不同沉积压强对所生长的GaN薄膜晶体结构特征的影响.研究表明,沉积温度影响GaN薄膜结构,在700～750℃沉积范围内随温度升高,所沉积生长的GaN薄膜具有良好的结晶质量.在5～10Pa沉积气压范围内,提高气压有利提高GaN薄膜的结晶质量.GaN films have grown on Al2O3（0001）substrates by a KrF excimer pulsed laser deposition （PLD） .The crystalline quality , microstructure properties, and surface morphology of the GaN films were characterized by X- ray diffraction （XRD）,Atomic Force Microscope（AFM）. The influence of substrate temperature in the range of 700 - 800℃ on structural properties, and deposition pressure in range of 5 - 20 Pa on the crystallinity of GaN films are systematically studied . It is found that that the structural quality of GaN films is improved by increasing the growth temperature from 700 - 750 ℃, and the crystalline quality of the GaN films is improved with increasing deposition pressure to 10 Pa. The high - quality hexagonal wurtzite structures GaN film is deposited on Al2O3 （0001）substrates using a substrate temperature of 750 ℃, a deposition pressure of 10 Pa.

关 键 词：GAN薄膜 脉冲激光沉积 X射线衍射 

分 类 号：O484.1[理学—固体物理]