静电雾化沉积制备PbTiO_3薄膜的研究  

PREPARATION OF PbTiO_3 THIN FILMS BY ELECTROSTATIC SPRAY DEPOSITION

作　　者：宫华[1] 黄晖[2] 汪敏强[2] 刘开平[1] 

机构地区：[1]长安大学材料工程系,西安710054 [2]西安交通大学电子陶瓷与器件教育部重点实验室,710049

出　　处：《中国陶瓷工业》2005年第5期17-20,12,共5页China Ceramic Industry

摘　　要：采用静电雾化沉积技术制备了PbTiO3薄膜,探索了沉积温度和沉积时间对所制备薄膜的结构和形貌的影响。通过调节制备工艺,制备了多孔和致密的PbTiO3薄膜。测试了所制备钛酸铅薄膜的介电频率特性,在100kHz的介电常数和介电损耗分别为222和0.0247。PbTiO3 thin films have been deposited on Si （111） and Pt/Ti/Si （111） by electrostatic spray deposition. The effect of substrate temperature and deposition time on the structure and morphologies of the films were studied. Both porous and dense PbTiO3 thin films were prepared by modification of the deposition sequence. The dielectric properties of the PbTiO3 thin films were measured. The dielectric constant and the dissipation factor of the PbTiO3 film at 100 kHz were 222 and 0. 0247, respectively.

关 键 词：静电雾化沉积 钛酸铅 铁电薄膜 

分 类 号：TM221[一般工业技术—材料科学与工程]