金属掺杂对半导体薄膜光学性质的影响  

Effect on optical properties of semiconductor films by Fe doping

作　　者：王军华[1] 

机构地区：[1]潍坊学院,山东潍坊261061

出　　处：《潍坊学院学报》2005年第4期95-96,58,共3页Journal of Weifang University

摘　　要：研究了射频溅射法制备的半导体膜的光学特性。通过样品透射谱分析,发现在半 导体In2O3材料中掺入金属Fe颗粒的薄膜中,电子的带间跃迁由In2O3的直接跃迁变为间接 跃迁;随Fe所占体积份数的增加,局域态尾变宽,带隙变窄。这是由于掺入Fe颗粒后,母体材 料与金属颗粒的界面处表面态增多,以及母体材料的非晶化引起的。The optical properties of In2O3 granular semiconductor films prepared by the radio frequency sputtering have been studied. By studying the transmittance spectra of the granular films sample, it has been found that In2O3 is a kind of semiconductor material with direct transition band gap, but the transition between bands for Fe doped In203 granular films is indirect. With increasing Fe volume, the band gaps of Fe doped granular films decreases and the localized states becomes wider, which can be attributed to the increase of the surface area as well as the non-crystallization of the In2O3 matrix with the increase of concentration of Fe.

关 键 词：半导体膜 间接跃迁 局域态 

分 类 号：O484.4[理学—固体物理]