半导体物理效应及其应用讲座 第四讲 光吸收跃迁效应与半导体红外探测器的应用发展  

Application of optical absorption transition effects and the development of semiconductor photo-electronic detectors

作　　者：褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《物理》2005年第11期840-847,共8页Physics

基　　金：国家自然科学基金(批准号:60221502)资助项目

摘　　要：光吸收跃迁效应是半导体光电探测器的基本物理过程.文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展.讨论窄禁带半导体带间光吸收跃迁的理论和实验.文章还介绍了本征光吸收系数的表达式及其在材料表征和确定器件截止波长方面的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用.Optical absorption transition effects are a fundamental physical process in semiconductor photo-electronic detectors. This paper reviews the research on this effect in narrow gap semiconductors for infrared photo-electronic detectors. The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors. Applications of the expressions for the intrinsic absorption coefficient with respect to the characterization of HgCdTe thin films and the cut-off wavelength of the detectors, as well as the negative luminescence discovered in recent years in mid-infrared HgCdTe photodiodes, are described.

关 键 词：光吸收 光跃迁 半导体光电子探测器 

分 类 号：O472.3[理学—半导体物理] TN215[理学—物理]