大功率GaInP/AlGaInP半导体激光器  

Characteristic Analysis on High Power GaInP/AlGaInP Semiconductor Laser Diodes

作　　者：徐云[1] 郭良[1] 曹青[1] 宋国峰[1] 甘巧强[1] 杨国华[1] 李玉璋[1] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2005年第11期2213-2217,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2002AA313050)~~

摘　　要：制备了大功率实折射率GaInP/AlGaInP压应变分别限制量子阱激光器.所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到.制备的激光器具有双沟脊波导结构,条宽和腔长分别为3和900μm,前后端面分别蒸镀5%的增透膜和95%的高反膜.分析了室温连续激射时激光器的光电输出性能.阈值电流的典型值为32mA,光学灾变阈值为88mW,功率为80mW时的工作电流为110mA,斜率效率为1W/A,串联电阻为3Ω.基横模光输出功率可达60mW,60mW时的平行结和垂直结的远场发散角分别为10°和32°,激射波长为658·4nm.器件的内损耗为4·1cm-1,内量子效率达80%,透明电流密度为648A/cm2.High power AIGalnP compressively strained separate confinement heterojunction quantum well laser diodes with real refractive index are successfully fabricated. The epitaxial growth of the laser is carried out by a one-step MOCVD using a 15°- misoriented GaAs substrate. The laser diodes have a ridge-waveguide with a 3μm-wide, 900μm-long, and 5 %/95 % coating. The typical threshold current of these devices is 32mA,the COD threshold is 88mW, and the continuous wave operation current and slope efficiency at 80mW are 110mA and 1W/A,respectively. Stable fundamental-mode operation at 60mW is obtained and the full angles at half-maximum power, perpendicular and parallel to the junction plane, are 32° and 10°, respectively. The lasing wavelength is 658.4nm. The internal loss is 4. 1cm^-1 ,the internal quantum efficiency is 80% ,and the transparent current density is 648A/cm^2.

关 键 词：半导体激光器 AlGaInP可见光激光器 应变量子阱 

分 类 号：TN248.4[电子电信—物理电子学]