超晶格覆盖层对拓展InAs量子点发光波长的影响  

Effects of Covering Layer on Extending the Emission Wavelenghs of InAs Quantum Dots

作　　者：牛智红 任正伟[2] 贺振宏[2] 

机构地区：[1]山西省综合职业技术学院轻工分院,山西太原030013 [2]中国科学院半导体研究所,北京100083

出　　处：《山西大学学报（自然科学版）》2005年第4期380-382,共3页Journal of Shanxi University(Natural Science Edition)

摘　　要：提出了一种调节InA s量子点长波长发光的方法.采用分子束外延生长G aA s/InA s短周期超晶格作覆盖层,可以拓展量子点发光波长至1.3μm^1.5μm.研究了不同超晶格周期作覆盖层对InA s量子点的晶体结构和光学特性的影响:发现随测试温度的升高,量子点的PL发光强度增强的一种反常现象.认为这是不同量子间载流子输运的结果.A new method to tune the emission wavelength of InAs self-assembled quantum dots （QDs） was proposed. The emission wavelength of the InAs QDs grown by molecular beam epitaxy （MBE） was extended to 1.3 μm-l. 5 μm range by introducing a covering layer of short period GaAs/InAs superlattice on the QDs. The influence of the different periods of the superlattice on the erystal structure and optical property was investigated. An abnormal phenomenon was found that the photoluminescence intensity was increased with increasing the measuring temperatures. This phenomenon was attributed to the mechanism of carrier transferring processes between QDs.

关 键 词：量子点 超晶格 光荧光 覆盖层 

分 类 号：O431[机械工程—光学工程]