CVD法制备Sb掺杂SnO_2薄膜的结构与性能研究  

Structure and properties of Sb-doped SnO_2 films prepared by chemical vapor deposition method

作　　者：谢莲革[1] 沃银花[1] 汪建勋[1] 沈鸽[1] 翁文剑[1] 刘起英[2] 韩高荣[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027 [2]浙江大学蓝星新材料技术有限公司,浙江杭州310013

出　　处：《浙江大学学报（工学版）》2005年第11期1824-1828,共5页Journal of Zhejiang University：Engineering Science

基　　金：国家"863"高技术研究发展计划资助项目(2001AA320202)

摘　　要：采用化学气相沉积法(CVD)制备了Sb掺杂SnO2薄膜(ATO),研究了Sb掺杂量对ATO薄膜结构和性能的影响.利用X射线衍射(XRD)、扫描电镜(SEM)、X射线光电子能谱(XPS)等分析手段对所制得薄膜的结构、形貌、成分等进行了表征,XRD结果表明在基板温度为665℃时能够制得结晶性能较好的多晶薄膜,XPS分析确定掺杂后的Sb以Sb5+离子形式存在.讨论了Sb掺杂量对方块电阻、透射率和反射率等薄膜性质的影响,结果表明,当Sb掺杂量为2%时取得最小方块电阻为7.8Ω/□,在可见光区薄膜的透射率和反射率随着Sb掺杂量的增加呈下降趋势.最后探讨了Sb掺杂SnO2薄膜的显色特性,认为Sb5+离子的本征吸收是薄膜显色的主要原因.Sb-doped SnO2 films （antimony-doped tin oxide, ATO） were prepared by chemical vapor deposition （CVD） method to analyze the effect of dopant amount on the structure and properties of the ATO films. The structure, morphology and composition of the films were characterized by means of X-ray diffraction （XRD）, scanning electron microscopy （SEM） and X-ray photoemission spectroscopy （XPS）. XRD analysis showed that films with good crystallinity were grown at the substrate temperature of 665℃. XPS studies indicated that antimony dopant existed mainly as Sb^5＋. The influence of dopant amount on the properties, such as sheet resistance, visible transmittance and reflection of the films, were investigated. The results revealed that a minimum sheet resistance of 7.8Ω/□ was obtained with dopant amount of 2%. In the visible region, the transmission and reflection of these films decreased with increasing dopant amount. The coloring characteristic of the films was also discussed. The intrinsic absorption of Sb^5＋ was considered as the main cause of the film coloring.

关 键 词：化学气相沉积(CVD) Sb掺杂SnO2薄膜 掺杂量 

分 类 号：TB43[一般工业技术] TB34