X射线与半导体探测器相互作用过程的仿真研究  

Study on MCNP-4B applications to semiconductor detector simulation

作　　者：谢利平[1,2] 何江华[1] 王良厚[1] 邹士亚[1] 

机构地区：[1]防化研究院第二研究所 [2]济南军区装备部防化技术室,250002

出　　处：《核电子学与探测技术》2005年第6期849-851,共3页Nuclear Electronics & Detection Technology

摘　　要：采用MCNP4B仿真了能量为1-100keV的单能X射线与硅半导体探测器发生相互作用的过程。仿真结果表明,当X射线能量较低时,在探测器的硅半导体上沉积能量较低,随着X射线光子能量升高,沉积能量增大,但是在探测器的整个能量段,沉积能量并非线性增加,而是有一定的涨落,经检验,5个探测器在其工作能段范围内探测效率呈正态分布。Using MCNP4B simulates the interaction of x-ray photon（1-100keV） and silicon semiconductor detector. When the energy of X-ray photon is low ,the energy deposit in the silicon semiconductor is low. With the increase of the X-ray photon energy, the energy deposit in the silicon increases. But in the full energy segment of the detector the deposit energy is not always increase, and it has fluctuation. According to results tested, these five detectors obey normal school distribution in their working energy segment .

关 键 词：X射线光子 MCNP4B 硅半导体探测器 光电效应 康普顿散射 

分 类 号：TP319.9[自动化与计算机技术—计算机软件与理论]