纯锆上离子注入钇和镧后的表面分析  

Surface study of zirconium implanted with yttrium and lanthanum

作　　者：彭德全[1] 白新德[1] 潘峰[1] 孙辉[1] 

机构地区：[1]清华大学材料科学与工程系,北京100084

出　　处：《物理学报》2005年第12期5914-5919,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:G2000067207-1)资助的课题.~~

摘　　要：用金属蒸汽真空弧源,以40kV加速电压对纯锆样品分别进行了1016—1017/cm2的钇、镧离子注入,注入温度约为130℃.然后对注入样品进行表面分析.x射线光电子能谱分析表明,注入的钇以Y2O3形式存在,镧以La2O3形式存在.俄歇电子能谱表明,纯锆基体表面的氧化膜厚度随着离子注入剂量的增加而增加,当离子注入剂量达到1017/cm2时,氧化膜的厚度达到了最大值.卢瑟福背散射显示镧层的厚度约为30nm,同时直接观察到当离子注入剂量为(La+Y)1017/cm2时,纯锆样品表面发生了严重的溅射.Zirconium substrates were implanted with yttrium and lanthanum ions with a fluence ranging from 10^16/cm^2 to 10^17/cm^2 at approx 130 ℃, using a metal vapor vacuum are source at an acceleration voltage of 40 kV. The surfaces of the implanted samples were then analysed. The valence states of elements in the implanted surface layer were analysed using x-ray photoelectron spectroscopy, showing that yttrium exists in the form of Y2O3, and lanthanum exists in the form of La2O3 . Depth distributions of elements in the implanted surface of samples were obtained by Auger electron spectroscopy, showing that the thickness of oxide film on zirconium substrate increases with increasing implantation fluence, and when the fluence of 10^17/cm^2 was used, the maximum thickness of the oxide film was obtained. Rutherford backscattering indicates that a profile distribution depth of - 30 nm of La appears in Zr, which also indicates that a serious sputtering occurred during the （La ＋ Y） 10^17/cm^2 implantation.

关 键 词：纯锆 钇和镧离子共注入 卢瑟福背散射 X射线光电子能谱 

分 类 号：TG174.44[金属学及工艺—金属表面处理]