掺锗CZSi中光致发光谱的研究  

Study of PL Spectrum of Ge Doping CZSi

作　　者：闫书霞[1] 张维连[1] 孙军生[1] 

机构地区：[1]河北工业大学材料中心天津

出　　处：《半导体杂志》1996年第3期18-20,共3页

摘　　要：本文研究了掺有不同浓度锗的直拉硅（ＣＺＳｉ）在温度３５０℃～５５０℃等时退火后的光致发光谱（ＰＬ谱）。结果发现：杂质锗使硅材料的本征激发峰强度增加，ＰＬ谱随着锗浓度的增加，峰位向低能端移动，ＰＬ峰变宽。实验也表明：随着退火温度的升高，在ＰＬ谱的低能端出现了新的激发峰，锗的存在推迟和抑制了新的激发峰的产生；与不掺锗的直拉硅相比，锗并没有在硅中引入新的深能级。We have studied the Photoluminescence(PL) Spetrum of Czochralski silicon(CZSi) doped with different concentration of Germanium and annealing at 350～550℃ withine the same time.It is found that Germanium doping increases the intensity of intrinsic excitation peaks.With the increasing of Ge concentration the peaks move to lower levels and the spectrum becomes broader.We also find that with the increasing of the annealing temperature,new excitation peaks appear at lower levels of PL spectrum,which are resisted and defered,due to the existence of Ge.Compareing to the CZSi without Ge doping,We find that Germanium doesn't give rise to new deep levels.

关 键 词：直拉硅 掺杂 光致发光谱 退火 

分 类 号：TN304.12[电子电信—物理电子学] TN305.3