掺钠钛酸铋薄膜的制备及主要性能的研究  

Preparation and Main Properties of Sodium-substituted Bi_4Ti_3O_(12) Thin Films

作　　者：杨长红[1] 王卓[1] 仪修杰[1] 姜付义[1] 翟剑庞[1] 马广鹏[1] 韩建儒[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100

出　　处：《压电与声光》2005年第6期671-673,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50172031;60278036)

摘　　要：采用金属有机溶液分解法(MOSD)在SiO2/p-Si(111)衬底上制备了Bi3.25Na2.25Ti3O12(BNaT)薄膜。利用X-射线衍射技术研究了薄膜的结构和结晶性,同时还研究了不同退火温度对漏电流、积累态电容、损耗因子的影响及薄膜的I-V、C-V和-εf性能。Bi3.25 Na2.25 Ti3O12（BNaT） thin films were prepared on SiO2/p-Si（111） substrate by a metalorganic solution decomposition （MOSD） method. The structural characteristic and crystallization of the films were examined by X-ray diffraction. Effects of annealing temperature on leakage current, accumulation capacitance and dissipation factor were investigated. I-V, C-V and ε-f properties of the films were also studied.

关 键 词：金属有机溶液分解法 BNaT 铁电薄膜 

分 类 号：TB43[一般工业技术]