提高DC平面磁控溅射中靶材利用率的新方法  

A New Method to Increase the Utilization Factor of Target by DC Planar Magnetron Sputtering

作　　者：周勇[1] 

机构地区：[1]四川压电与声光技术研究所,重庆400060

出　　处：《压电与声光》2005年第6期698-699,共2页Piezoelectrics & Acoustooptics

摘　　要：目前已得到广泛应用的DC平面磁控反应性溅射制备ZnO压电薄膜，由于靶面氧化和靶表面氧化物的沉积，导致放电电阻增加和靶表面的弧光放电，严重影响压电薄膜的生长和靶材利用率。该文介绍了一种采用稀硝酸对已被氧化的金属锌靶进行清洗的新方法，效果良好，靶材利用率提高3～4倍。The piezoelectric ZnO thin films are prepared by the widely applied planar magnetron reactive DC sputtering method. The discharge resistance increases and the arc discharge appears on the target surface, when the target surface is oxidized and the oxides deposit this surface, so the quality of the piezoelectric films are influenced and the utilization factor of this target decrease. The experimental results show the utilization factor of the Zn target increases by factor of 3-4.

关 键 词：金属Zn靶 ZNO压电薄膜 反应性溅射 靶材利用率 

分 类 号：TN304[电子电信—物理电子学]