用于抗闭锁的辐射敏感开关  

Radiation Sensitive Switch for Latchup Prevention

作　　者：许献国[1] 胡健栋[1] 赵刚[2] 徐曦[2] 

机构地区：[1]北京邮电大学,北京100876 [2]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《微电子学》2005年第6期581-583,共3页Microelectronics

摘　　要：介绍了一种用于抗闭锁的辐射敏感开关。设计的辐射敏感开关在“闪光I”瞬时辐射模拟源上进行了实验考核。实验结果表明,该辐射敏感开关能够成功驱动超大规模集成电路,达到抗闭锁设计目的。The design procedure of a radiation sensitive switch for prevention of latchup is described in detail The radiation sensitive switch designed was tested on a transiental radiation simulation device. The experimental results show that the radiation sensitive switch is capable of driving very large scale integrated circuits （VLSI） successfully and achieving the goal of latchup prevention.

关 键 词：抗闭锁 辐射敏感开关 集成电路 

分 类 号：TN43[电子电信—微电子学与固体电子学]