聚焦离子束曝光技术  

Focused Ion Beam Lithography Technology

作　　者：马向国[1,2] 顾文琪[1] 

机构地区：[1]中国科学院电工研究所 [2]中国科学院研究生院北京100039

出　　处：《电子工业专用设备》2005年第12期56-58,共3页Equipment for Electronic Products Manufacturing

摘　　要：聚焦离子束技术是一种集形貌观测、定位制样、成份分析、薄膜淀积和无掩模刻蚀各过程 于一身的新型微纳加工技术。它大大提高了微电子工业上材料、工艺、器件分析及修补的精度和速 度,目前已经成为微电子技术领域必不可少的关键技术之一。对聚焦离子束曝光技术作了介绍。Focused Ion Beam is an advanced micro/nano technology for figure observation, orientation making-sample, component analysis, film deposition and maskless etching. It has improved precision and speed of material, technic and component＇s analysis and repair in micro-electronics industry greatly. So it has become a key technology in the field of micro-electronics technology. In this paper, Focused Ion Beam Lithography technology and is introduced.

关 键 词：聚焦离子束 液态金属离子源 曝光 

分 类 号：TN305.7[电子电信—物理电子学]