老炼过程对表面放电型ACPDP显示屏内MgO薄膜二次电子发射系数的影响  

Influence of Aging Process to the Effective Secondary Electron Emission Coefficient of MgO Film in Surface Discharge ACPDP

作　　者：郭滨刚[1] 胡文波[1] 郑德修[1] 何锋[1] 刘纯亮[1] 

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049

出　　处：《真空电子技术》2005年第5期47-50,共4页Vacuum Electronics

基　　金：教育部科学技术研究重大项目"彩色PDP介质保护膜的制备与工艺优化"(No.0205-[2002]78)资助

摘　　要：在Paschen定律基础上,使用计算出的表面放电型ACPDP的击穿电压数据,拟合实验测得的ACPDP显示屏内Ne+Xe混合气体的击穿电压特性曲线(Ub^pd),从而确定了击穿电压(Ub)和MgO介质保护膜有效二次电子发射系数(γeff)之间函数关系式中的相关参数,并由此关系研究了老炼过程对表面放电型ACPDP显示屏内MgO介质保护膜γeff的影响。结果表明,老炼开始时,击穿电压随着老炼时间的延长迅速降低,2 h后击穿电压逐渐趋于稳定。与此对应,MgO介质保护膜的γeff会随着老炼时间的延长迅速增大并在2 h后趋于稳定。当Xe的含量从0.5%升高到4%时,击穿电压会随着Xe的含量升高而升高,而γeff会随着Xe的含量升高而降低。本文使用的计算γeff的方法可以用于计算ACPDP屏内介质保护膜的γeff。On the basis of Paschen law, the breakdown voltage of surface discharge ACPDP were calculated and used to fit the breakdown voltage curve （ Ub- pd） of Ne ＋ 1% Xe obtained in experiments. Parameters A and B and the effective secondary electron emission coefficient γeff in equation Ub = f （γeff） were determined by the fitting process. In terms of the determined equation Ub = f（γeff）, the influence of aging process to the effective secondary electron emission coefficient of MgO protective layers in surface discharge ACPDP was analyzed. The results showed that firing voltage decreased with the increasing aging time and became steady after 2 hours. Corresponding to firing, voltage, the effective secondary electron emission coefficient γeff increased with the increasing aging time and became steady after 2 hours. The fitting method can be used in the calculation of γeff of protective layers in real ACPDP products. It is useful for the study of the secondary electron emission behaviors of films.

关 键 词：老炼 MGO 击穿电压 有效二次电子发射系数 

分 类 号：TB43[一般工业技术]