V-P-Fe系CTR的导电模型  

The Electric Conduction Model of V-P-Fe CTR

作　　者：王惠[1] 甘朝钦[2] 吴宗汉[2] 张明德[2] 

机构地区：[1]南京师范大学电气与自动化工程学院,江苏南京210042 [2]东南大学物理系,江苏南京210096

出　　处：《南京师范大学学报（工程技术版）》2005年第4期1-3,41,共4页Journal of Nanjing Normal University(Engineering and Technology Edition)

基　　金：江苏省高校自然科学基金资助项目(02KJD510011)

摘　　要：从微观方面分析V-P-Fe系CTR组份中VO2与相变的关系、Fe2O3与杂质缺陷、P2O5与晶粒体的形成,并论述3种材料所形成固溶体的导电特性,即晶粒体的电特性和粒界的电特性.另一方面,通过透射电镜晶相图和扫描电镜形貌图的分析,同样可得出CTR半导瓷是由晶粒体(VO2,Fe3O4,P2O5)和粒界(晶粒间界)构成,其导电模型是:晶粒体-粒界模型.利用该模型对V-P-Fe系CTR样品的实测阻温特性曲线进行分析.晶粒体阻值具有临界特征,且在高温态呈金属性,在低温态成为半导体,而粒界的导电则采取“电势垒模式”.The paper analyzes from a microscopic perspective the relationship between VO2 and phase change, Fe2 03 and impurity flaw, P2Os and crystal-grain formation in the V-P-Fe CTR composition, elaborates the electricity conductive characteristic of three kinds of materials forming the solid solution. On the other hand, crystal-grain electricity characteristic and grain-boundary of electricity characteristic can also be obtained by means of the radio mirror crystal phase diagram and chart analysis of the scanning electricity mirror appearance, The deduction that CTR semiconductor porcelain is crystal-grain （VO2, Fe304, P205 ） and grain-boundary composition could be inferred. Its electric conduction model is ： Crystal-grain-grain-boundary of model. This model is used to analyze the resistance-temperature characteristic curve of the CTR sample. The resistance of the crystal-grain has the critical characteristic, appears to be metal at high temperature and semiconductor at low temperature, while the conducting mechanism of the grainboundary can be required as ＂the model of potential-barrier＂.

关 键 词：临界特性 阻温特性 晶粒体 粒界 

分 类 号：O471.4[理学—半导体物理]