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机构地区:[1]内蒙古师范大学物理与电子信息学院,内蒙古呼和浩特010022
出 处:《内蒙古师范大学学报(自然科学汉文版)》2005年第4期426-429,433,共5页Journal of Inner Mongolia Normal University(Natural Science Edition)
基 金:国家自然科学基金资助项目(10364003)
摘 要:采用LLP变分法研究氮化物抛物量子阱(GaN/Al0.3Ga0.7N)材料中自由极化子的能级,给出基态能量和基态到第一激发态跃迁能量随抛物量子阱宽度变化的函数关系.研究结果表明,自由极化子基态能量和跃迁能量随着阱宽的增大首先急剧减小,然后缓慢下降,最后接近GaN体材料中的三维值.这些结果在定性上与GaAs/AlxGa1-xAs抛物量子阱中的值相似,但在定量上有所不同.GaN/Al0.3Ga0.7N抛物量子阱中电子-声子相互作用对极化子能量的贡献明显大于GaAs/Al0.3Ga0.7As抛物量子阱中的相应值,因此,讨论氮化物抛物量子阱中的电子态问题时应考虑电子-声子相互作用.The energy of a free polaron in GaN/Al0.3 Ga0.7N infinite parabolic quantum well was investigated by LLP's variational method. The ground state energy and the transition energy (from ground state to first excited state) of the free polaron in a GaN/Al0.3Ga0.7N parabolic quantum well as functions of the well width L were given. The results showed that the ground state and the transition energy decrease with increasing well width L and finally close to the 3D-value in GaN. The results are qualitatively similar to that of the GaAs/Al0.3 Ga0.7 As parabolic quantum well,bUt they are different in values. The contribution of the interaction between the electron and phonon to the energy in a GaN/Al0.3 Ga0.7 N parabolic quantum well is larger than that in the GaAs/Al0.3Ga0.7As parabolic quantum well. Therefore,the interaction of the electron-phonon should be considered when the electron state are discussed in the GaN/Al0.3Ga0.7N parabolic quantum well.
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