50例微波器件失效分析结果汇总与分析  

A Review of Fifty Failure Analysis Cases of Microwave Devices

作　　者：来萍[1] 李萍[1] 张晓明[1] 李少平[1] 徐爱斌[1] 施明哲[1] 牛付林[1] 郑廷珪[1] 

机构地区：[1]中国电子产品可靠性与环境试验研究所

出　　处：《固体电子学研究与进展》2005年第4期475-480,共6页Research & Progress of SSE

摘　　要：对约50例微波器件失效分析结果进行了汇总和分析,阐述了微波器件在使用中失效的主要原因、分类及其分布。汇总情况表明,由于器件本身质量和可靠性导致的失效约占80%,其余20%是使用不当造成的。在器件本身的质量和可靠性问题方面,具体失效机理有引线键合不良、芯片缺陷(包括沾污、裂片、工艺结构缺陷等)、芯片粘结、管壳缺陷、胶使用不当等;在使用不当方面,主要是静电放电(ESD)损伤和过电损伤(EOS),EOS损伤中包括输出端失配、加电顺序等操作不当引入的过电应力等。The failure analysis results of about fifty cases for microwave devices have been summarized. The main failure causes, the classifications and distributions are described. It is shown that the failure causes of eighty percent cases are due to device quality and reliability problems, and twenty percent are due to application problems. The failure mechanisms that belong to quality and reliability problems include bad bondings, chip defects, adhesion problems, package defects and glue degradations. As for application problems, the main failure reasons are damage caused by ESD and EOS, including mismatch in the output ports and incorrect biasing sequence, etc.

关 键 词：微波器件 失效分析 汇总分析 

分 类 号：TN323[电子电信—物理电子学] TN454.06