Tl-2212本征约瑟夫森结型负阻器件及负阻放大器  

NEGATIVE RESISTANCE DEVICES AND AMPLIFIERS BASED ON Tl-2212 INTRINSIC JOSEPHSON JUNCTIONS

作　　者：周铁戈[1] 李永刚[1] 季鲁[1] 张旭[1] 赵新杰[1] 左旭[1] 阎少林[1] 方兰[1] 

机构地区：[1]南开大学电子信息科学与技术系,天津300071

出　　处：《低温物理学报》2005年第A01期601-604,共4页Low Temperature Physical Letters

基　　金：高等学校博士学科点专项科研基金;天津市光电子薄膜器件与技术重点实验室资助的课题

摘　　要：我们利用Tl-2212超导薄膜制作出了的本征约瑟夫森结型负阻器件.对于4μm长3m宽的微桥型负阻器件,峰值电压为0.09V,峰值电流为1.44mA,谷值电压为0.75V,谷值电流为1.05mA,线性区间内负阻阻值约为-1400Ω.利用这种器件,制作了简单的负阻并联式电流放大器.实验证明它确实对信号具有电流放大作用,放大倍数可以通过改变负载电阻的大小来改变.Negative resistance devices based on Tl-2212 thin films have been fabricate ＆ For a 4μm long and 3μm wide device, the peak voltage is 0. 09 V, the peak current is 1.44 mA, the valley point voltage is 0. 75 V, and the valley point current is 1.05 mA. The value of the resistance in the linear range is -1400Ω. A simple current amplifier was designed and constructed. Experiments show that the current signal can be amplified and the gain of the amplifier can be adjusted by using different load resistance.

关 键 词：负阻器件 本征约瑟夫森效应 Tl—2212超导薄膜 

分 类 号：TN722[电子电信—电路与系统]