立方氮化硼薄膜的形核与生长过程试验研究  

Investigation of Nucleation and Ggrowth Process of Cubic Boron Nitride Films

作　　者：蔡志海[1] 张平[1] 谭俊[1] 

机构地区：[1]装备再制造技术国防科技重点实验室,北京100072

出　　处：《中国表面工程》2005年第6期10-15,共6页China Surface Engineering

基　　金：国家自然科学基金资助项目(59971065)

摘　　要：采用离子束辅助沉积法在硅片上成功制备了一定立方相含量的氮化硼薄膜,采用各种现代分析方法对沉积的薄膜进行了表征分析,包括傅立叶红外光谱(FTIR)、X射线光电子能谱(XPS)和原子力显微镜(AFM)等分析方法;并利用FTIR结果系统研究了衬底的表面清洁度和辅助能量、辅助束流、辅助气体中氮气含量、温度以及离子原子到达比等参数对膜中立方氮化硼含量的影响。试验结果表明:立方氮化硼薄膜成核与生长的条件窗口比较窄,要获得高质量的立方氮化硼薄膜,各种镀膜参数的相互合理调整与匹配是必要的。c-BN thin film was deposited on Silicon wafer by ion beam assisted deposition. The films were analyzed by various techniques including FTIR, XPS, AFM and nanoindenter. The influence of cleanliness of wafer, ion energy, current density, ratio of N2 to Ar, temperature and ratio of ion/atom on the formation of c-BN films were studied. The results showed that the conditions of nucleation and growth for c-BN films are quite narrow. The parameters must be matched perfectly to get high quality c-BN thin films.

关 键 词：c-BN薄膜 离子束辅助沉积 形核 生长 

分 类 号：TG174.444[金属学及工艺—金属表面处理]