曲折状FeSiB/Cu/FeSiB三层膜结构应力阻抗效应研究  

Stress-impedance effects of FeSiB/Cu/FeSiB trilayers with a meander structure

作　　者：陈吉安[1] 茅昕辉[1] 赵晓昱[2] 丁文[1] 曹莹[1] 周勇[1] 

机构地区：[1]上海交通大学微纳科学技术研究院薄膜与微细技术教育部重点实验室微米/纳米加工技术国家级重点实验室,上海200030 [2]上海工程技术大学汽车工程学院,上海200336

出　　处：《功能材料与器件学报》2005年第4期419-422,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金项目(No.50275096);上海市纳米专项资助(No.0215nm1040352nm014)

摘　　要：采用磁控溅射法在玻璃基底上制备了曲折状FeSiB/Cu/FeSiB三层膜结构,在1～40MHz范围内研究了FeSiB膜和Cu膜厚度对三层膜结构应力阻抗效应的影响.结果表明:高频下三层膜的应力阻抗效应随着其形变的增加近似线性增加,在自由端弯曲变形1mm、外加电场频率为25MHz时,应力阻抗效应达到-18.3%,在力敏传感器方面具有广阔的应用前景.FeSiB/Cu/FeSiB trilayers with a meander structure were fabricated by magnetron sputtering on thin glass substrate, and the stress-impedance （SI） effects were studied in the frequency range of 1 - 40MHz for different film thicknesses of FeSiB films and Cu layer. Experimental results show that the values of stress -impedance （SI） ratio increase nearly linearly with the deflection of the FeSiB/Cu/FeSiB trilayers at high frequencies, and a large negative SI ratio of- 18.3% is obtained at 25MHz with lmm deflection in the FeSiB/Cu/FeSiB trilayers with a thicker FeSiB film. It＇s attractive for the applications in stress sensors.

关 键 词：应力阻抗 FeSiB/Cu/FeSiB三层膜 磁控溅射 曲折状 

分 类 号：O484.43[理学—固体物理]