磁控溅射法制备TiO_2空穴缓冲层的有机发光器件  

Investigation on organic light-emitting diodes with TiO_2 ultra-thin films as hole buffer layer by RF magnetron sputtering

作　　者：仲飞[1] 刘彭义[1] 任思雨[1] 

机构地区：[1]暨南大学物理系,广州510632

出　　处：《功能材料与器件学报》2005年第4期461-465,共5页Journal of Functional Materials and Devices

基　　金：广东省自然科学基金项目(No.021169)

摘　　要：采用磁控溅射方法在ITO表面制备了不同厚度的TiO2超薄膜用做有机发光二极管(OLEDs)的空穴缓冲层,使OLEDs(ITO/TiO2/TPD/A lq3/A l)的发光性能得到很大改善。研究TiO2缓冲层厚度对器件性能影响的结果表明,当TiO2缓冲层厚度为1 nm,电流密度为100 mA/cm2时,器件的发光效率为2 cd/A,比未加缓冲层器件的发光效率增加了近一倍。这是由于加入适当厚度的TiO2缓冲层限制了空穴的注入并且提高了空穴与电子注入之间的平衡。Organic light -emitting diodes （OLEDs） using TiO2 ultra -thin films as a hole injecting buffer layer of different thicknesses were prepared by RF magnetron sputtering. The diodes with a typical structure of ITO/TiO2/TPD/Alq3/AI （ TPD ： N,N＇-diphenyl -N,N＇-bis （ 3 - methylphenyl ） -1,1＇ - diphenyl -4, 4＇- diamine, Alq3 ： tris （ 8 - quinolinolato ） - aluminum） show better electroluminescent properties in com- parison with the samples without TiO2 buffer layer. The investigation on the effects of the thickness for TiO2 shows that EL efficiency of the device , which contains 1 nm TiO2 buffer layer,is improved to 2 cd/A by ap- proximately 100% in comparison with the device without buffer layer at the current density of 100mA/cm^2. It can be attributed to the limit of the injecting number of hole and the improvement of the balance of hole and electron injections by the TiO2 ultra -thin film with suitable thickness as a hole buffer layer.

关 键 词：TiO2超薄膜 磁控溅射 有机发光二极管 空穴缓冲层 

分 类 号：TN383.1[电子电信—物理电子学]