Te溶液生长半磁半导体Cd_（1－x）Mn_xTe时界面稳定性的讨论  

THE INyESTIGATION OF INTERFACIAL STABILITY DURING Te SOLUTION GROWTH OF SMSC Cd_(1-x)Mn_xTe

作　　者：莫要武[1] 吴汶海[1] 

机构地区：[1]上海大学

出　　处：《应用科学学报》1996年第1期78-85,共8页Journal of Applied Sciences

摘　　要：用Ｍｕｌｌｉｎｓ和Ｓｅｋｅｒｋａ的线性动力学理论定性探讨了Ｔｅ溶液生长半磁半导体Ｃｄ_（１Ｍｎ_ｘＴｅ时固－液界面的稳定性．并在自行设计的旋转式液相外延装置中，用ＣｄＴｅ作籽晶，利用失稳小平面的长厚，富Ｔｅ溶液生长了ＣｄＭｎＴｅ晶膜，其面积为０．５ｃｍ￣２，厚度～０．４ｍｍ．分析了界面能各向异性的影响及晶膜表面形貌呈波纹状的原因，最后探讨了获得稳定液相外延的条件．Cd_(1-x)Mn_xTe Orystal films were grown in the OdTe seed Orystal fromTe solution,uaing the revolying liquid phals epitaxial(LPE) eonfignration designedby us. The crystal film, typically ￣0.4mm thick and 0 .scmZ in area, stood at anangel wish the seed cryptal plane.The stability of the interface between thesolution and solid phases during the growth process was studied using the linearstability analysis proposed by Mnllins and Sekerka.The influences of heterogeneityin interfaeial energy and causes of forming the ripple morphology on the crystalfilm surface were analyzed. Oonditions for the stable liquid phase epitaxy wereprobed.

关 键 词：溶液生长 半磁半导体 界面 稳定性 CDMNTE 

分 类 号：TN304.26[电子电信—物理电子学]