用MOCVD法生长GaN基自组装量子点的相关实验及其分析  

Experiments and Their Analysis for Self-Assembly Growth of GaN Quantum Dots via MOCVD

作　　者：孟焘[1] 朱贤方[1] 王占国[2] 

机构地区：[1]厦门大学,福建厦门361005 [2]中科院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《稀有金属材料与工程》2005年第12期1849-1853,共5页Rare Metal Materials and Engineering

基　　金：国家自然科学基金专项研究课题(90406024);国家自然科学基金(90401022);教育部科学技术研究重点项目(105099);中科院半导体所半导体材料科学重点实验室开放课题;厦门大学启动经费(XK0012)

摘　　要：GaN基相关材料的量子点生长是半导体材料研究的一个热点,尤其是用MOCVD方法生长GaN基自组装量子点占了相当的比例,因此相关的文献较多,但综述性文章却不多见。鉴于此,本文综述了用MOCVD法制备GaN基量子点的不同实验方法,并对影响量子点生长的实验条件和参数做了简要的分析。希望能够对相关的实验研究工作提供一些参考。In recent years, growth of GaN-based materials-related quantum dots has become a hot topic in semiconductor materials research. Considerable efforts have been devoted to growth of self-assembled quantum dots of GaN-based materials via MOCVD （Metal Organic Chemical Vapor Deposition） and there are a lot of relevant literatures. There is, however, few review papers for the topic. In this paper, different experimental methods for fabrication of quantum dots of GaN-based materials via MOCVD are critically reviewed and the experimental conditions and parameters, which may affect growth of the quantum dots, are analyzed, with an aim at providing some critical reference for the related future experiment research.

关 键 词：GaN基量子点 自组装 S-K模式 MOCVD 

分 类 号：TN304[电子电信—物理电子学]