一种闪存适用新型高速高驱动电压泵设计  

A Novel High Driving Charge Pump with High Speed for Flash

作　　者：苏志强[1] 俞军[1] 程君侠[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海200433

出　　处：《复旦学报（自然科学版）》2005年第6期935-940,共6页Journal of Fudan University：Natural Science

摘　　要：提出了一种适用于低电压供电Flash Memory的新型高速高驱动电压泵的设计方法.在分析电压泵工作原理和结构演变并指出当前实现方法在驱动和响应上的制约因素的基础上,结合目前先进Flash Memory工作电压和工作要求,提出了结合三阱工艺和CTS方法以消除体效应和阈值电压降从而提高性能的四相位电荷泵设计方法,专门对时钟驱动进行的优化,提高了响应速度.最后在0.18μm,3 V工艺上仿真并和几种现存实现方法对比得以验证.A novel charge pump used in low voltage flash memory is proposed. Based on the analysis of operation mechanism and development of the charge pump, as well as the factors limiting its efficiency and speed, a new method using triple-well structure and charge transfer switches（CTS） is suggested to diminate threshold voltage drop and body effect. The clock driving circuit is specially optimized to lower output resistance, and speed up the response. Compared with conventional implementations, simulation shows the improved efficiency and speed of the present design.

关 键 词：半导体技术 电压泵 闪存 低电压 CTS 三阱 

分 类 号：TN402[电子电信—微电子学与固体电子学]