曲折形三层等宽FeCuNbSiB/Cu/FeCuNbSiB多层膜巨磁阻抗效应研究  

Giant Magneto-impedance Effect in Trilayer FeCuNbSiB/Cu/FeCuNbSiB Films with a Meander Structure

作　　者：余先育[1] 曹莹[1] 周勇[1] 丁文[1] 商干兵[1] 周志敏[1] 高孝裕[1] 

机构地区：[1]上海交通大学微纳科学技术研究院微米/纳米加工技术国家重点实验室薄膜与微细技术教育部重点实验室,上海200030

出　　处：《电子元件与材料》2006年第1期23-26,共4页Electronic Components And Materials

基　　金：国家863计划资助项目(2004AA302042);国家自然科学基金资助项目(50275096;10402023);上海市纳米专项资助项目(0352nm014)

摘　　要：采用磁控溅射方法，在玻璃基片上制备了曲折形三层等宽FeCuNbSiB／Cu／FeCuNbSiB多层膜。在1．40MHz下，研究了多层膜材料的巨磁阻抗（GMI）效应随外加磁场的变化关系。结果表明：在频率为5MHz、磁场强度为12kA／m下，横向和纵向GMI效应分别达-23．5％和-16．8％。薄膜材料的纵向、横向GMI效应随外加磁场变化呈现先增后降，而纵向表现尤为明显。Trilayer FeCuNbSiB/Cu/FeCuNbSiB films with a meander structure were prepared by magnetron sputtering method, and the giant magneto-impedance （GMI） effect was investigated in the frequency range of 1-40 MHz. The results show that the GMI values are -23.5% and -16.8% for a frequency of 5 MHz at a magnetic field of 12 kA/m with magnetic field applied along the longitudinal and transverse direction, respectively. Both the longitudinal and the transverse GMI effect increases with applied magnetic field, reaching a maximum at a field of near the anisotropy field, while the longitudinal GMI effect are better than that of the transverse direction.

关 键 词：电子技术 巨磁阻抗效应 三层等宽结构FeCuNbSiB/Cu/FeCuNbSiB薄膜 微细加工技术 

分 类 号：O484.43[理学—固体物理]