氩离子束溅射沉积PTFE高分子膜  

Forming PTFE film by Ar + sputtering deposition

作　　者：李有宏[1] 宫泽祥[1] 龙振湖[1] 纪纯新 

机构地区：[1]三束材料表面改性国家重点实验室大连理工大学分部 [2]中国科学院大连化学物理研究所

出　　处：《大连理工大学学报》1996年第3期279-282,共4页Journal of Dalian University of Technology

摘　　要：用氩离子束溅射聚四氟乙烯靶材，在黄铜上沉积聚四氟乙烯薄膜．用ＸＰＳ和ＩＲＳ分析方法确定了聚四氟乙烯高分子膜的存在，并依据沉积膜形成过程对沉积膜与靶材在ＩＲＳ谱图上的差异给予了解释．结果表明。Polytetrafluoroethylene (PTFE) thin film on brass is produced using argon ions sputtering a PTFE target. Analysis results with XPS and IRS prove that C-F (carbon fluorine) bonds are present. And it is shown that this way of depositing polymer film is effective. IRS analysis result of the deposited film is different from that of the target material in the width of peaks and the relative intensity of peaks. The former also exhibits slight shift of peaks to lower wave numbers and some new peaks. These differences are explained in terms of film fabricating process.

关 键 词：离子束 溅射 真空沉积 薄膜 聚四氟乙烯 塑料 

分 类 号：TQ325.407[化学工程—合成树脂塑料工业]