宽带电流模形式PHEMT前置放大器设计  

Design of wideband current-mode PHEMT preamplifier

作　　者：周忻[1] 朱恩[1] 孙玲[1] 王志功[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096

出　　处：《东南大学学报（自然科学版）》2005年第6期872-875,共4页Journal of Southeast University：Natural Science Edition

基　　金：国家高技术研究发展计划(863计划)资助项目(2003AA319030);江苏省高校省级重点实验室开放课题资助项目(KJS03058)

摘　　要：设计并实现了基于0.2μm PHEMT工艺的宽带电流模形式前置放大器.前置放大器将光电二极管产生的电流信号放大并转换为差分电压信号.电路为共栅结构,输入电阻小,减小了光检测器寄生电容对电路带宽的影响.设计时采用了电容峰化技术,可获得比普通共栅结构更宽的带宽.后仿真结果为,在单电源5V,输出负载50Ω的条件下,该前置放大器的跨阻增益为1.73kΩ,带宽可达到10.6GHz,同时具有低噪声和较宽的线性范围,芯片面积为607μm×476μm.测试结果表明,此前置放大器可以很好地工作在10Gbit/s速率上.A wideband current-mode PHEMT （ pseudomorphic high electron mobility transitor） preamplifier based on a 0. 2 μm GaAs PHEMT technology is realized. A photodiode current is amplified and converted into a differential voltage. A common-gate topology is adopted to reduce input resistance. As a result, the effect of the parasitic capacitance of photo detector （PD） on bandwidth is reduced. A capacitive peaking technique is used to achieve a larger bandwidth than conventional common-gate network. The post simulation results show that at a single supply voltage of 5 V, the preamplifier has a transimpedance of 1.73kΩ with a bandwidth of 10. 6GHz, as well as low noise and a wide linear range, when driving 50Ω payload. The chip area is 607 μm × 476 μm. According to the test results, the preamplifier can operate well at the bit rate of 10 Gbit/s.

关 键 词：PHEMT 电流模 跨阻 噪声 

分 类 号：TN929.11[电子电信—通信与信息系统]