Ga_(1-x)Al_xAs晶体的共振喇曼散射和光学畸变势  

Resonant Raman Scattering and Optical Deformation Potentials in Ga_1-x AI_x As

作　　者：杨锦赐 王仁智[1] 连世阳[1] 

机构地区：[1]厦门大学

出　　处：《固体电子学研究与进展》1989年第2期192-196,共5页Research & Progress of SSE

摘　　要：为了选择带隙对固定激光线调谐的可能性,借助于Ga_(1-x)A1_xAs的禁带宽度随组分x和温度的变化,测量了Ga_(1-x)A1_xAs晶体的一级和二级共振喇曼散射。用线性化丸盒轨道方法(LMTO方法)计算单声子光学畸变势d_0,从共振喇曼散射的测量得到双声子2LO_2和LO_1+LO_2的光学畸变势D_1。In order to choose the possibility of tuning the gaps with respect to a fixed gas laser line, the resonant Raman scattering of one-order and second-order were measured by means of the variations of the energy gap with the composition χ and the temperature in Ga1_χAlχAs. Oae-phonon optical deformation potentials are calculated by the LMTO method. From these resonant Raman measurements, values for the two-phonon optical deformation potentials are obtained.

关 键 词：Ga1-xAlx As 晶体 喇曼散射 共振 

分 类 号：TN304.23[电子电信—物理电子学]