分布布拉格反射镜中具有渐变层的垂直腔面发射半导体激光器  

Vertical-cavity Surface-emitting Lasers Among Distributed Bragg Reflectors with Grading Layers

作　　者：刘颖[1] 姜秀英[1] 刘素平[1] 张晓波[1] 杜国同[1] 

机构地区：[1]吉林大学电子工程系,集成光电子学国家重点联合实验室吉林大学实验区

出　　处：《中国激光》1996年第1期40-42,共3页Chinese Journal of Lasers

摘　　要：报道了分布布拉格反射镜（ＤＢＲ）中具有渐变层的垂直腔面发射激光器的研究结果。器件是采用钨丝掩膜两次质子轰击方法制备的。该方法是目前报道的垂直腔面发射激光器制作方法中最简单的。初步的实验已实现室温宽脉冲高占空比激射，最低阈值为１８ｍＡ，最大峰值功率大于２ｍＷ，激射波长为８７１ｎｍ，串联电阻一般为１００～２００Ω。A novel vertical-cavity surface-emitting laser with grading DBR is reported in this paper.The structure is obtained by twice deep H+ implantations which use a crossed tungsten wire as the implantation mask. The fabrication process is the simplest ever reported in vertical-cavity surface-emitting lasers fabrications.In the primary experiment,the lasing wavelength of 871 nm,the lowest threshold current of 18 mA and the largest output power of 2 mW are obtained under pulse condition at room temperature using a current source with a 10μs pulse-width and 1 00μs cycle. The series resistances of the device are 100-200Ω.

关 键 词：垂直腔 半导体激光器 DBR 激光器 

分 类 号：TN248.4[电子电信—物理电子学]