Effect of Thermal Annealing on Characteristics of Polycrystalline Silicon  

热退火对多晶硅特性的影响(英文)

作　　者：任丙彦[1] 勾宪芳[1] 马丽芬[1] 励旭东 许颖 王文静 

机构地区：[1]河北工业大学半导体研究所,天津300130 [2]北京太阳能研究所,北京100083

出　　处：《Journal of Semiconductors》2005年第12期2294-2297,共4页半导体学报（英文版）

摘　　要：Oxygen and carbon behaviors and minority-carrier lifetimes in multi-crystalline silicon （mc-Si） used for solar cells are investigated by FTIR and QSSPCD before and after annealing at 750～ 1150℃ in N2 and O2 ambient. For comparison, the annealing of CZ silicon with nearly the same oxygen and carbon concentrations is also carried out under the same conditions. The results reveal that the oxygen and carbon concentrations of mc-Si and CZ-Si have a lesser decrease,which means oxygen precipitates are not generated,and grain boundaries in mc-Si do not affect carbon behavior. Bulk lifetime of mc-Si increases in N2 and O2 ambient at 850,950,and 1150℃ ,and the lifetime of mc-Si wafers annealed in 02 are higher than those annealed in N2, which shows that a lot of impurities in mc-Si at high temperature annealing diffuse to grain boundaries,greatly reducing recombination centers. Interstitial Si atoms filling vacancies or recombination centers increases lifetime.为研究热退火对太阳电池用多晶硅的影响,在750～1150℃,N2和O2环境下分别对硅片进行热处理.用傅里叶红外光谱仪和准稳态光电导衰减法测量退火前后的氧碳含量和少子寿命的变化.为了比较,对有相同氧碳含量的直拉硅片进行同样处理.结果发现:在多晶和单晶片中氧碳含量下降很小,意味着没有氧沉淀产生,晶界对碳行为影响不大.多晶硅片在N2和O2环境下,850、950和1150℃下退火,少子寿命都有很大提高,并且在O2中退火比N2中退火少子寿命上升得更多,可能由于在高温退火时大量杂质扩散到晶界处,减少了复合中心.另外,间隙硅原子填充了空位或复合中心从而导致寿命提高.

关 键 词：polycrystalline silicon OXYGEN LIFETIME 

分 类 号：TN304[电子电信—物理电子学]