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作 者:徐敏[1] 金效齐[1] 宫丽红[1] 史克英[1] 施云波[2]
机构地区:[1]哈尔滨师范大学化学系,黑龙江哈尔滨150080 [2]哈尔滨理工大学测控技术与通讯工程学院,黑龙江哈尔滨150080
出 处:《黑龙江大学自然科学学报》2005年第6期773-776,780,共5页Journal of Natural Science of Heilongjiang University
基 金:黑龙江省教育厅基金资助项目(10541086);.黑龙江省博士后基金资助项目(2004)
摘 要:在酸性条件下,以导电玻璃(ITO)为基底合成了SBA-16分子筛膜。并以SBA-16分子筛膜为模板,利用电沉积法组装金属Fe。SEM等研究发现,在低电解液浓度时Fe沉积1 h,能够完全填满约为1μm厚的SBA-16分子筛膜的孔道。确定了沉积Fe的最佳条件:即沉积铁的电极电势为-1.6V(相对汞氧化汞电极);电解液FeSO4的浓度为0.03mol.L-1;电极距离≤0.4cm;沉积时间为1 h左右。按上述条件在SBA-16膜内沉积Fe,可以生长一维Fe的纳米线。Continuous mesoporous silica SBA- 16 thin films with three -dimensional (3D) accessible pore structures (Im 3m space groups) were prepared by a dip- coating technique in nonaqueous media under acidic conditions on Indium - tin oxide glass (ITO). And deposition of iron metal into the mesopores of SBA - 16 films were achieved by using an electrochemical method. The experimental results of SEM and Fe deposition indicated that assembling Fe nanowires by electrochemical deposition can fully fill in the holes of I p.m thickness of mesoporous silica SBA- 16 films with low concentration of electrolyte for lh. The optimum conditions of Fe deposition were determined that applied potential was- 1.6V, FeSO4solution concentration 0. 03mol · L^-1, electrode separation ≤ 0. 4cm, deposition time lh on the 1μm SBA- 16 film, in which the 1D Fe wires were obtained.
关 键 词:介孔分子筛SBA-16膜 电沉积Fe 极化曲线
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