FRAM用铁电薄膜疲劳问题研究进展  

The Research Actualities on the Fatigue Problem of Ferroelectric Thin Films for the Use of FRAM

作　　者：黄平[1,2] 徐廷献[1] 

机构地区：[1]太原理工大学理学院物理系 [2]天津大学材料学院,天津300072

出　　处：《材料导报》2006年第1期9-13,共5页Materials Reports

基　　金：国家自然科学基金重大资助项目(59995520)Nippon Sheet Glass Foundation for Materials Science and Engineering资助项目(30105544)

摘　　要：综述了FRAM用铁电薄膜的疲劳机理,对比了钙钛矿结构铁电体与铋层类钙钛矿结构铁电体的区别,介绍了铋层类钙钛矿结构铁电材料的优良抗疲劳性能与该类铁电材料结构的密切关系,和为提高铋层类钙钛矿结构铁电薄膜Bi4Ti3O12的抗疲劳性能所采取的掺杂改性的研究现状,并针对目前铁电薄膜制备中存在的问题提出了今后研究需着重解决的关键问题。In this paper, recent progress on the electric fatigue of ferroelectric thin films is briefly reviewed. The differences of perovskite ferroelectric and bismuth-layered-perovskite ferroelectric are compared, and the close relation between fatigue free behavior and its structure for bismuth-layered-perovskite ferroelectric is introduced. The research actualities of modification by doping to improve the fatigue properties of Bi4 Tis O12 are also introduced. Meanwhile,aiming at the existing oroblems of the oresent study, some suggestions for the future research are made.

关 键 词：铁电薄膜 疲劳 钙钛矿结构 铋层类钙钛矿结构 掺杂改性 

分 类 号：O482.54[一般工业技术—材料科学与工程] TM271.4[理学—固体物理]