离子束增强沉积掺杂氧化钒薄膜的最佳退火条件  

Best Annealing Conditions of Doped Vanadium Oxide Films Prepared by Modified Ion Beam Enhanced Deposition

作　　者：谢建生[1] 李金华[1] 袁宁一[1] 

机构地区：[1]江苏工业学院信息科学系,江苏常州213016

出　　处：《长江大学学报（自然科学版）》2005年第10期359-361,共3页Journal of Yangtze University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(60277019);江苏省自然科学基金资助项目(BK2005023)

摘　　要：用离子束增强沉积方法制备掺杂Ar和W的VO2多晶薄膜,明显改变了VO2薄膜的相变温度。试验发现,薄膜存在一个形成VO2结构的临界结晶温度,该温度随薄膜制备时沉积条件的不同而改变。选择适当的杂质和退火条件可以将VO2薄膜的相变温度降低到室温附近,获得较高室温电阻温度系数的薄膜。Polycrystalline VO_2 films doped with argon and tungsten are prepared with modified Ion Beam Enhanced Deposition(IBED) method.The experimental results indicated that the phase transition temperature(Tc) of the doped IBED VO_2 films is changed evidently,which is related to undoping VO_2 films,and there exists a critical temperature for crystallization of VO_2,which changes with the different deposition conditions of the IBED method.The temperature of the vanadium dioxide film could be reduced to room temperature effectively by selecting the proper impurity element and the annealing conditions.It is possible to increase the temperature coefficient of resistance(C_T,R) of the films for IR application.

关 键 词：氧化钒薄膜 退火 离子束增强沉积 

分 类 号：TB43[一般工业技术] TN213[电子电信—物理电子学]