CMOS／SOI的高温特性分析  

Analysis of High Temperature Properties of CMOS/SOI

作　　者：竺士炀 高剑侠 林成鲁[1] 李金华 

机构地区：[1]中国科学院上海冶金研究所信息功能材料国家重点实验室,江苏石油化工学院功能材料实验室

出　　处：《微电子学》1996年第3期146-149,共4页Microelectronics

摘　　要：采用ＳＩＭＯＸ和ＢＥＳＯＩ材料制作了ＣＭＯＳ倒相器电路，在２５～２００℃的不同温度下测量了ＰＭＯＳ和ＮＭＯＳ的亚阈特性曲线。实验结果显示，薄膜全耗ＳＩＭＯＸ器件的阈值电压和泄漏电流随温度的变化小于厚膜ＢＥＳＯＩ器件。CMOS inverter circuits were fabricated on SIMOX (Separation by Implantation of Oxygen) and BESOI (Bonding and Etch-back Silicon-on-Insulator) materials. The subthreshold characteristics of PMOS and NMOS were measured at different temperature points from room temperature to 200℃. Experiments show that the temperature dependence of the threshold voltage and the leakage current for thin film fully-depleted SIMOX devices were lower than that for thick film BESOI devices.

关 键 词：半导体材料 CMOS SIMOX BESOI 倒相器 

分 类 号：TN304.01[电子电信—物理电子学]