SOI全介质隔离与高频互补双极兼容工艺  

A Compatible Technology of SOI Full Dielectric Isolation with Complementary Bipolar Process

作　　者：王界平[1] 王清平[1] 

机构地区：[1]电子工业部第24研究所

出　　处：《微电子学》1996年第3期150-152,共3页Microelectronics

摘　　要：ＳＯＩ材料的全介质隔离技术与高频互补双极工艺的结合是研制抗辐照能力强、频带宽、速度高的集成运算放大器的理想途径。从实验的角度提出了一种ＳＯＩ材料全介质隔离与高频互补双极工艺兼容的工艺途径。To develop a new generation of wide-band, high-speed operational amplifier, new approaches are needed. The high-frequency complementary bipolar process has the advantage of achieving high fT npn and pup transistors with extremely small parasitic capacitance,and siliconon-insulator full dielectric isolation is an excellent isolation technique.Combining the two processes, a compatible technology of SOI full dielectric isolation and complementary bipolar process is experimented. Vertical pup and npn transistors with fT up to 1 GHz have been fabricated in the experimentation.

关 键 词：SOI材料 全介质隔离 工艺 高频互补双极 

分 类 号：TN305.95[电子电信—物理电子学]