PLT晶种层对PLZT薄膜介电性能的影响  

Effects of PLT Seeding Layers on Dielectric Properties of PLZT Thin Films

作　　者：张卫华[1] 南瑞华[1] 赵高扬[1] 赵卫[2] 

机构地区：[1]西安理工大学材料科学与工程学院,陕西西安710048 [2]中国科学院西安精密光学机械研究所,陕西西安710068

出　　处：《电子元件与材料》2006年第2期11-14,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(50072018);国家基础研究重大项目前期研究专项资助项目(2003CCA03300)

摘　　要：采用sol-gel工艺,以钛酸铅镧(PLT)作为晶种层,在Pt/TiO2/Si基板上,制备了锆钛酸铅镧(PLZT)薄膜。研究了有晶种层的PLZT薄膜的结晶温度及介电性能。结果表明:引入PLT晶种层的PLZT薄膜,在600℃热处理可得到良好的钙钛矿结构,比无晶种层薄膜降低了约100℃;其相对介电常数为1177(1 kHz),提高约60%,介质损耗为0.10～0.13,降低幅度最高可达40%～50%。PLZT thin films with PLT seeding layers were fabricated by sol-gel process on Pt/TiO2/Si substrates. The crystallization temperature and dielectric properties of PLZT thin films with PLT seeding layers were investigated. The Results show that. the perovskite structure of PLZT thin films with PLT seeding layer is obtained at about 600℃, and thermotreatment temperature is decreased about 100℃ compared with film without PLT seeding layers. At 1 kHz and room temperature, the dielectric constant is 1177, that is increased about 60%, and tg δ is 0.10～0.13, that is decreased about 40%～50%.

关 键 词：无机非金属材料 锆钛酸铅锎(PLZT)薄膜 sol-gel工艺 钛酸铅镧晶种层 介电性能 

分 类 号：TN384[电子电信—物理电子学]