TiO_2系压敏陶瓷施主掺杂研究  

Research on Donor Doping of TiO_2-based Varistor Ceramics

作　　者：朱道云[1] 周方桥[2] 庄严[3] 

机构地区：[1]中山大学物理科学与工程技术学院,广东广州510275 [2]广州大学物理与电子工程学院,广东广州510405 [3]中国电子科技集团公司第七研究所,广东广州510310

出　　处：《电子元件与材料》2006年第2期28-30,共3页Electronic Components And Materials

基　　金：广州市教育局科技计划资助项目(重点01-2)

摘　　要：研究了Ta2O5和Nb2O5掺杂对TiO2系压敏陶瓷电性能的影响。采用电子陶瓷制备工艺,制备了两组TiO2系压敏陶瓷,借助热电子发射理论,分析了样品的I-V特性及介电频谱特性。结果发现,Ta2O5掺杂的样品具有最低的压敏电压(E10mA=5.03 V.mm–1)和最大的视在介电常数(εra=1.5×105)。The influences of Ta2O5 and Nb2O5 on the electrical properties of TiO2-based varistor ceramics were studied, The TiO2-based varistor ceramics doped with donor Ta2O5 and Nb2O5 were prepared respectively by electric ceramic preparing technique. The main electrical properties such as I-V characteristic and dielectric spectra of these samples were analyzed and compared by thermal electron emitting mechanism. The results show that the sample doped with Ta2O5 exhibits the lowest breakdown voltage （E10mA= 5.03 V · mm^-1） and the biggest apparent dielectric constant （εm=1.5×10^5）.

关 键 词：电子技术 TIO2压敏陶瓷 压敏电压 非线性系数 视在介电常数 

分 类 号：TN304[电子电信—物理电子学] TN379