GaAs单晶滑移位错X射线形貌术研究  

STUDY OF SLIP DISLOCATIONS IN GaAs CRYSTAL BY X-RAY TOPOGRAPHY

作　　者：麦振洪[1] 葛培文[1] 何杰 崔树范[1] 贺楚光 马碧春[2] 陈坚邦[2] 王永鸿[2] 

机构地区：[1]中国科学院物理研究所 [2]北京有色金属研究总院

出　　处：《物理学报》1989年第8期1344-1347,T001,T002,共6页Acta Physica Sinica

摘　　要：应用X射线形貌技术研究了掺In和不掺In砷化镓单晶的滑移位错。观察到由于位错密度不同,其滑移位错的组态不同。对滑移位错和胞状网络进行了初步的理论解释。Slip dislocation in In-doped and undoped GaAs single crystal were investigated by meant of X-ray topography. Different configurations of the slip dislocations were observed, which resulted from the different densities of dislocations. The mechanism of die slip dislocation and cellular network structure formation is also discussed preliminarily.

关 键 词：砷化镓 单晶 位错 X射线 形貌术 

分 类 号：TN304.23[电子电信—物理电子学]