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作 者:郜小勇[1] 李瑞[1] 陈永生[1] 卢景霄[1] 刘萍[1] 冯团辉[1] 王红娟[1] 杨仕娥[1]
机构地区:[1]郑州大学教育部材料物理重点实验室,郑州450052
出 处:《物理学报》2006年第1期98-101,共4页Acta Physica Sinica
摘 要:借助RF-PECVD辅助RTP技术,采用高沉积气压的技术路线制备了优质的微晶硅薄膜,并利用拉曼光谱、反射谱和透射谱分别研究了微晶硅的晶化率和光学性质.实验中发现微晶硅的吸收边出现了相对红移,此相对红移可归结于薄膜晶化率的提高和带尾态密度的降低.Using high-deposition-pressure technique, high-quality microcrystalline silicon film was prepared by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) combined with rapid thermal treatment. The volume fractions of the amorphous and microcrystalline phases and optical properties of microcrystalline silicon were carefully studied by Raman spectra, reflectance spectra and transmittance spectra. The results show a red shift of the absorption edge of microcrystalline silicon, which can be due to the increase in the volume fractions of the amorphous and microcrystalline phase and decrease in the band tail states.
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