超低压选择区域生长法制备产生10GHz重复率超短光脉冲的级联电吸收调制器与分布反馈激光器单片集成光源  

10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth

作　　者：赵谦[1] 潘教青[1] 张靖[1] 周光涛[2] 伍剑[2] 周帆[1] 王宝军[1] 王鲁峰[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所国家光电子工艺中心,北京100083 [2]北京邮电大学光通信与光波技术教育部重点实验室,北京100876

出　　处：《物理学报》2006年第1期261-266,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(973)项目(批准号:G2000068301);国家高技术研究发展计划(批准号:2002AA312150);国家自然科学基金(批准号:90101023;60176023;60476009)资助的课题~~

摘　　要：采用超低压(22×102Pa)选择区域生长(selective area growth,SAG)金属有机化学气相沉积(metal_organic chemical vapor deposition,MOCVD)技术成功制备了InGaAsP/InGaAsP级联电吸收调制器(electro absorption modulator,EAM)与分布反馈激光器(distributed feed backlaser,DFB)单片集成光源的新型光电器件.实验结果表明,采用该技术制备的器件具有良好的性能:激射阈值为19mA,出光功率为4·5mW,在5V的驱动电压下达到了20dB的消光比,器件3dB响应带宽达到了10GHz以上.应用这种新型器件,利用级联EAM的光开关效应,获得了重复率为10GHz、半高宽(full_width_at_half_maximum,FWHM)为13·7ps的超短光脉冲.In this work, a novel light source of tandem InGaAsP/InGaAsP multiple quantum well electroabsoption modulator（EAM） monolithically integrated with distributed feedback laser is fabricated by ultra-low-pressure （22 × 10^2 Pa） selective area growth metal-organic chemical vapor diposition technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3dB bandwidth in EAM part is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained due to the gate operation effect of tandem EAMs.

关 键 词：超低压 选择区域生长 集成光电子器件 超短光脉冲 

分 类 号：TN248[电子电信—物理电子学]